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STWA65N60DM6 - STMicroelectronics

Description: N-channel 600 V, 60 mΩ typ., 46 A MDmesh DM6 Power MOSFETs in a TO‑247 and TO‑247 long leads packages

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STWA65N60DM6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads-ren1
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STWA65N60DM6 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247 long leads-ren1
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STWA65N60DM6 Details

  • Manufacturer Part Number:

    STWA65N60DM6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    900 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    46 A

  • Drain-source On Resistance-Max:

    0.071 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    368 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STWA65N60DM6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STWA65N60DM6 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the power dissipation above 125°C to ensure reliable operation.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) and ensure the heat sink is properly mounted. The datasheet provides thermal resistance values to help with thermal design.
  • The recommended gate drive voltage for the STWA65N60DM6 is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to avoid damage to the device.
  • Yes, the STWA65N60DM6 can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched and the gate drive signals are synchronized to avoid uneven current sharing.
  • The recommended PCB layout for the STWA65N60DM6 involves keeping the power loops as small as possible, using a solid ground plane, and minimizing the distance between the device and the decoupling capacitors. The datasheet provides guidelines for PCB layout and thermal design.

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STWA65N60DM6 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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