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STWA68N65DM6AG - STMicroelectronics

Description: Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

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STWA68N65DM6AG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long leads-ren1
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STWA68N65DM6AG - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247 long leads-ren1
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STWA68N65DM6AG Details

  • Manufacturer Part Number:

    STWA68N65DM6AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1900 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    72 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.6 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    480 W

  • Pulsed Drain Current-Max (IDM):

    280 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STWA68N65DM6AG Frequently Asked Questions (FAQs)

  • The SOA is not explicitly stated in the datasheet, but it can be estimated using the device's thermal impedance, maximum junction temperature, and voltage ratings. Consult STMicroelectronics' application notes or contact their support team for guidance.
  • The gate drive voltage depends on the desired switching frequency, gate charge, and threshold voltage. A general rule of thumb is to use a gate drive voltage of 10-15V for most applications. Consult the datasheet's gate charge characteristics and application notes for more information.
  • The datasheet provides some general guidelines, but for optimal performance, it's recommended to follow STMicroelectronics' application notes and reference designs for PCB layout, thermal vias, and heat sink design. Additionally, consult with experienced engineers or STMicroelectronics' support team for specific guidance.
  • While the datasheet doesn't explicitly state a maximum switching frequency, the device's characteristics, such as the gate charge and output capacitance, suggest it may not be suitable for very high-frequency applications. Consult STMicroelectronics' application notes and support team for specific advice.
  • Follow STMicroelectronics' guidelines in the datasheet, and consult their application notes and reference designs for EMC and EMI mitigation techniques, such as proper PCB layout, filtering, and grounding.

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STWA68N65DM6AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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