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STWA75N65DM6 - STMicroelectronics

Description: N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

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STWA75N65DM6 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 long lead
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STWA75N65DM6 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-247 long lead
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STWA75N65DM6 Details

  • Manufacturer Part Number:

    STWA75N65DM6

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1900 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    480 W

  • Pulsed Drain Current-Max (IDM):

    280 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STWA75N65DM6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the STWA75N65DM6 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Typically, this involves connecting the gate to a voltage source through a suitable resistor, and ensuring the drain-source voltage is within the recommended range.
  • For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity and heat dissipation. This can include using thermal vias, heat sinks, and thermal interface materials. Additionally, ensure the device is mounted on a suitable heat sink and follow the recommended thermal design guidelines in the datasheet.
  • To protect the STWA75N65DM6 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, ensure the device is properly grounded during assembly and testing, and consider using ESD protection devices or circuits in the design.
  • The recommended gate drive circuits and components for the STWA75N65DM6 depend on the specific application and requirements. However, a typical gate drive circuit consists of a gate driver IC, resistors, and capacitors. The datasheet provides some guidance on gate drive circuits, but it's recommended to consult with STMicroelectronics or a qualified engineer for specific design recommendations.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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