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SUD15N15-95-E3 - Vishay

Description: N-Channel 150 V 15A (Tc) 2.7W (Ta), 62W (Tc) Surface Mount TO-252AA

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SUD15N15-95-E3 - Vishay - PCB symbol
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SUD15N15-95-E3 - Vishay PCB footprint - Other - Other - TO-252AA _1
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SUD15N15-95-E3 - Vishay - 3D model - Other - TO-252AA _1
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SUD15N15-95-E3 Details

  • Manufacturer Part Number:

    SUD15N15-95-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, TO-252, 3 PIN

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SUD15N15-95-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SUD15N15-95-E3 is a standard TO-220 package with a minimum pad size of 6.5mm x 4.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -55°C to 150°C, and provide adequate heat sinking to maintain a safe operating temperature.
  • The maximum allowed voltage transient for the SUD15N15-95-E3 is 100V, and it is recommended to use a voltage clamp or transient voltage suppressor to protect the device from voltage spikes and surges.
  • Yes, the SUD15N15-95-E3 can be used in high-frequency switching applications up to 100kHz, but it is recommended to use a gate driver with a low output impedance and a high current capability to minimize switching losses.
  • The power dissipation of the SUD15N15-95-E3 can be calculated using the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.

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SUD15N15-95-E3 Overview

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SUD15N15-95-E3 Alternates

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Part Image SUD15N15-95-E3 Vishay Siliconix

Power Field-Effect Transistor, 15A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Part Image SUD15N15-95 Vishay Siliconix

Power Field-Effect Transistor, 15A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252