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SUD35N10-26P-GE3 - Vishay

Description: MOSFET 100V 35A 83W 26mohm @ 10V-1

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SUD35N10-26P-GE3 - Vishay PCB footprint - Other - Other - SUD35N10-26P-GE3-2
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SUD35N10-26P-GE3 Details

  • Manufacturer Part Number:

    SUD35N10-26P-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    68 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    55 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SUD35N10-26P-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SUD35N10-26P-GE3 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliability in high-temperature applications, ensure that the device is operated within its specified temperature range (-55°C to 175°C), and provide adequate heat sinking and thermal management to prevent overheating.
  • The maximum allowed voltage transient for the SUD35N10-26P-GE3 is 40V, and it is recommended to use a voltage clamp or transient voltage suppressor to protect the device from voltage spikes and transients.
  • While the SUD35N10-26P-GE3 is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100kHz with proper PCB layout and decoupling. However, it is recommended to consult with a Vishay application engineer for specific guidance.
  • The SUD35N10-26P-GE3 should be stored in a dry, cool place away from direct sunlight and moisture. It is recommended to handle the device by the body and not the leads to prevent damage, and to use anti-static precautions to prevent ESD damage.

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SUD35N10-26P-GE3 Overview

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