Part Image

SUD42N03-3M9P-GE3 - Vishay

Description: Vishay SUD42N03-3M9P-GE3 N-channel MOSFET Transistor, 107 A, 30 V, 3-Pin TO-252AA

Download SUD42N03-3M9P-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SUD42N03-3M9P-GE3 - Vishay PCB footprint - Other - Other - SUD42N03-3M9P-GE3-3
click to zoom

SUD42N03-3M9P-GE3 Details

  • Manufacturer Part Number:

    SUD42N03-3M9P-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    101 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.0039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    73.5 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SUD42N03-3M9P-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SUD42N03-3M9P-GE3 is a TO-220AB package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliable operation in high-temperature environments, it's essential to provide adequate heat sinking, such as a heat sink with a thermal resistance of ≤ 10°C/W, and to follow the recommended thermal management guidelines in the datasheet.
  • The maximum allowed voltage transient for the SUD42N03-3M9P-GE3 is ±50V, with a duration of ≤ 100ns, to prevent damage to the device.
  • Yes, the SUD42N03-3M9P-GE3 can be used in switching applications, but it's essential to ensure that the device is operated within its safe operating area (SOA) and to follow the recommended switching guidelines in the datasheet.
  • To calculate the power dissipation of the SUD42N03-3M9P-GE3, use the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SUD42N03-3M9P-GE3 Overview

Use the download button to access the SUD42N03-3M9P-GE3 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like SUD42, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SUD42N03-3M9P-GE3

Showing 0 results