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SUP57N20-33-E3 - Vishay

Description: N-Channel 200 V 57A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB

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PCB Footprints
SUP57N20-33-E3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_2024-2
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3D Models
SUP57N20-33-E3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220AB_2024-2
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SUP57N20-33-E3 Details

  • Manufacturer Part Number:

    SUP57N20-33-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    57 A

  • Drain-source On Resistance-Max:

    0.033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SUP57N20-33-E3 Frequently Asked Questions (FAQs)

  • The recommended gate current for reliable triggering is typically in the range of 10-50 mA, depending on the specific application and circuit design.
  • To ensure SOA compliance, ensure that the device operates within the specified voltage and current ratings, and that the thermal management is adequate to prevent overheating.
  • The maximum allowable case temperature for the SUP57N20-33-E3 is typically 125°C, but this may vary depending on the specific application and environmental conditions.
  • While the SUP57N20-33-E3 is suitable for high-voltage applications, it may not be the best choice for high-frequency switching due to its relatively high switching time and limited di/dt capability.
  • To protect the device from EOS, ensure that the circuit design includes adequate overvoltage protection, such as TVS diodes or varistors, and that the device is operated within its specified voltage ratings.

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SUP57N20-33-E3 Overview

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Part Image SUP57N20-33-E3 Vishay Siliconix

Power Field-Effect Transistor, 57A I(D), 200V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB