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SVD2955T4G - onsemi

Description: Avalanche Energy Specified; IDSS and VDS(on) Specified at Elevated Temperature; Designed for Low Voltage, High Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NTD2955G Rochester Electronics LLC

12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369C-01, DPAK-3

NVD2955T4G onsemi

Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

NTD2955 onsemi

Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

NTD2955PT4G onsemi

Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

NTD2955G onsemi

Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for SVD2955T4G, check out Findchips.com


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Image	Part Number	Model
	NTD2955G Rochester Electronics LLC 12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369C-01, DPAK-3
	NVD2955T4G onsemi Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
	NTD2955 onsemi Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
	NTD2955PT4G onsemi Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
	NTD2955G onsemi Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
For a full list of alternate parts for SVD2955T4G, check out Findchips.com

SVD2955T4G - onsemi

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