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NTD2955T4G - onsemi

Description: Avalanche Energy Specified; IDSS and VDS(on) Specified at Elevated Temperature; Designed for Low Voltage, High Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes; RoHS Compliant

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NTD2955T4G - onsemi PCB footprint - Other - Other - DPAK  (SINGLE  GAUGE) CASE 369C ISSUE G
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NTD2955T4G - onsemi  - 3D model - Other - DPAK  (SINGLE  GAUGE) CASE 369C ISSUE G
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NTD2955T4G Details

  • Manufacturer Part Number:

    NTD2955T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China, Malaysia, Vietnam

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    216 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    55 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD2955T4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NTD2955T4G is -55°C to 150°C.
  • To ensure reliability, follow the recommended assembly and handling procedures, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a robust PCB design, and implementing adequate thermal management and ESD protection.
  • For optimal performance and thermal management, ensure a low-thermal-resistance PCB design, use a thermal pad or heat sink, and maintain a minimum clearance of 1.5 mm around the device. Also, consider using thermal vias and a thermal interface material (TIM) to improve heat dissipation.
  • Handle the device by the body, avoid touching the leads or die, and store the device in a dry, ESD-protected environment. Use anti-static packaging and follow proper ESD handling procedures to prevent damage.
  • Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 60s max, and 3°C/s max ramp rate. For rework, use a low-temperature soldering iron (<350°C) and avoid applying excessive force or heat to the device.

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NTD2955T4G Overview

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