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SZESD7241MXWT5G - onsemi

Description: SZESD7241MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP CapableSZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Ultra-Low Capacitance: < 1.0pF Max; Low Leakage: < 0.5uA; IEC61000-4-2 (ESD): Level 4 ±28kV Contact; IEC61000-4-4 (EFT): 40A - 5/50ns; IEC61000-4-5 (Lightning): 1A - 8/20us; These Devices are Pb

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SZESD7241MXWT5G Details

  • Manufacturer Part Number:

    SZESD7241MXWT5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    X2DFNW2

  • Package Description:

    X2DFNW-2

  • Manufacturer Package Code:

    711BG

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Date Of Intro:

    2020-04-28

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    ULTRA LOW CAPACITANCE

  • Breakdown Voltage-Max:

    28 V

  • Breakdown Voltage-Min:

    24.3 V

  • Breakdown Voltage-Nom:

    25 V

  • Clamping Voltage-Max:

    48 V

  • Configuration:

    SINGLE, 1 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-N2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    120 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Power Dissipation-Max:

    0.3 W

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2, 4-4, 4-5

  • Rep Pk Reverse Voltage-Max:

    24 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Test Voltage:

    24 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SZESD7241MXWT5G Frequently Asked Questions (FAQs)

  • A good PCB layout for the SZESD7241MXWT5G involves keeping the input and output traces short and separate, using a solid ground plane, and placing bypass capacitors close to the device. A 4-layer PCB with a dedicated power plane and a dedicated ground plane is recommended.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the VEE pin to a stable -5V power supply. The input common-mode voltage should be set to around 2.5V, and the output should be terminated with a 50Ω load to VCC/2.
  • The maximum operating frequency of the SZESD7241MXWT5G is 1.5 GHz, but it can be used up to 2.5 GHz with some degradation in performance. However, it's recommended to consult with onsemi's application engineers for specific guidance on using the device at frequencies above 1.5 GHz.
  • The SZESD7241MXWT5G has a maximum junction temperature of 150°C. To ensure proper thermal management, use a heat sink with a thermal resistance of less than 10°C/W, and keep the ambient temperature below 70°C. It's also recommended to use thermal vias and a thermal pad on the PCB to improve heat dissipation.
  • The SZESD7241MXWT5G has an integrated ESD protection circuit, but it's still recommended to use external ESD protection devices, such as TVS diodes or ESD arrays, to protect the device from electrostatic discharge events.

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