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SZESD7272LT1G
onsemi
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1 | Low Capacitance: < 2.0pF; Protection for IEC61000-4-2 (Level 4) & ISO 10605 Standards; Low ESD Clamping Voltage | SOT23 (3-Pin) | SZESD7272LT1G |
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SZESD8472MUT5G
onsemi
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1 | Industry Leading Capacitance Linearity Over Voltage; Ultra−Low Capacitance: 0.2 pF; Insertion Loss: 0.030 dBm; Small Footprint: 0.62 mm x 0.32 mm | Other | SZESD8472MUT5G |
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SZESD7104MUTAG
onsemi
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1 | SZESD7104MTWTAG Wettable Flank Package; Low ESD Clamping Voltage; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Low Capacitance (0.3 pF Typical, I/O to GND); IEC61000−4−2 (ESD): Level 4 | Other | SZESD7104MUTAG |
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SZESD7551N2T5G
onsemi
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1 | Stand−off Voltage: 3.3 V; Low Leakage: <1µA; IEC61000−4−2 Level 4 ESD Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Ultra−Low Capacitance (0.35 pF Max); Low Clamping Voltage; Response Time is < 1 ns; Low Dynamic Resistance < 1 Ω; SZESD7551MXWT5G Wettable Flank Package | Other | SZESD7551N2T5G |
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SZESD9R3.3ST5G
onsemi
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1 | Low Body Height: 0.016 (0.4 mm); Small Body Outline Dimensions: 0.039 x 0.024 (1.00 mm x 0.60 mm); UltraLow Leakage < 1 nA; UltraLow Capacitance 0.5 pF; Low Clamping Voltage; Standoff Voltage: 3.3 V; Response Time < 1.0 ns; IEC6100042 Level 4 ESD Protection; This is a PbFree and HalogenFree Device | Other | SZESD9R3.3ST5G |
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SZESD5Z3.3T1G
onsemi
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1 | Low Clamping Voltage; Small Body Outline Dimensions: 0.047″ x 0.032″ (1.20 mm x 0.80 mm); Low Leakage; Response Time is Typically < 1 ns; IEC61000−4−2 Level 4 ESD Protection and IEC61000−4−4 Level 4 EFT Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Peak Power up to 240 Watts @ 8 x 20 s Pulse; Low Body Height: 0.028″ (0.7 mm); ESD Rating of Class 3 (> 16 kV) per Human Body Model; These Devices are Pb−Fre | Small Outline Diode Flat Lead | SZESD5Z3.3T1G |
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SZESD7410MXWT5G
onsemi
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1 | Industry Leading Capacitance Linearity Over Voltage; ISO 10605 (ESD) 330 pF/2 k? ±30 kV Contact; Insertion Loss: 0.1 dB at 1 GHz; 0.50 dB at 3 GHz; Ultra−Low Capacitance: < 1.0 pF Max; Low Leakage: < 1 µA; IEC61000−4−2 (ESD): Level 4 ±30 kV Contact; IEC61000−4−4 (EFT): 40 A −5/50 ns; IEC61000−4−5 (Lightning): 1 A (8/20 ?s); SZESD7410MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These | Other | SZESD7410MXWT5G |
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SZESD1L001W1T2G
onsemi
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1 | Low Capacitance (0.3 pF Typical, I/O to GND); Low ESD Clamping Voltage (30 V Typical, +16 A TLP, I/O to GND); Level 4 IEC 61000-4-2 Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Short to Battery Survivability; These Devices are Pb−Free and are RoHS Compliant | SOT23 (6-Pin) | SZESD1L001W1T2G |
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SZESD8351MUT5G
onsemi
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1 | Low Capacitance (0.55 pF Max, I/O to GND); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Low ESD Clamping Voltage; Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) ISO 10605; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | Other | SZESD8351MUT5G |
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SZESD7351P2T5G
onsemi
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1 | Low Leakage: <50nA; Low Capacitance (0.6 pF Max, I/O to GND); Low Clamping Voltage; Response Time is < 1 ns; Low Dynamic Resistance < 1; IEC61000−4−2 Level 4 ESD Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Stand−off Voltage: 3.3 V | Small Outline Diode Flat Lead | SZESD7351P2T5G |
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SZESD8551MXWT5G
onsemi
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1 | Low Capacitance (0.30 pF Max, I/O to GND); Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) ISO10605 330 pF / 2 k? ±30 kV Contact; Low ESD Clamping Voltage; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; SZESD8551MXWT5G Wettable Flank Package | Other | SZESD8551MXWT5G |
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SZESD7205DT5G
onsemi
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1 | Low Capacitance (0.4 pF Typical, I/O to GND); Low ESD Clamping Voltage (12V Typical, +16A TLP, I/O to GND); Protection for the Following IEC Standards: IEC 61000−4−2 Level 4 (ESD); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Diode capacitance matching; These Devices are Pb−Free and are RoHS Compliant | Other | SZESD7205DT5G |
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SZESD8011MUT5G
onsemi
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1 | SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; Ultra Low Capacitance (0.10 pF Typ, I/O to GND); Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4); Low ESD Clamping Voltage; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | Other | SZESD8011MUT5G |
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SZESDR0502BT1G
onsemi
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1 | Excellent clampingcapability, low leakage and fast response time are combined with anultra low diode capacitance of 0.5 pF to provide best in classprotection from IC damage due to ESD. | SOT23 (3-Pin) | SZESDR0502BT1G |
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SZESD8351XV2T1G
onsemi
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1 | Low Capacitance (0.55 pF Max, I/O to GND); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Low ESD Clamping Voltage; Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) ISO 10605; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant | Small Outline Diode Flat Lead | SZESD8351XV2T1G |
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SZESD7351HT1G
onsemi
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1 | Low Leakage: <50nA; Low Capacitance (0.6 pF Max, I/O to GND); Low Clamping Voltage; Response Time is < 1 ns; Low Dynamic Resistance < 1; IEC61000−4−2 Level 4 ESD Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Stand−off Voltage: 3.3 V | Small Outline Diode | SZESD7351HT1G |
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SZESD7004MUTAG
onsemi
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1 | Low Capacitance (0.2 pF Typical, I/O to I/O); Protection for the Following IEC Standards: IEC 61000-4-2 (±15 kV Contact); UL Flammability Rating of 94 V0; This is a Pb-Free Device; Low ESD Clamping Voltage | Other | SZESD7004MUTAG |
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SZESD7241N2T5G
onsemi
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1 | SZESD7241MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP CapableSZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Ultra-Low Capacitance: < 1.0pF Max; Low Leakage: < 0.5uA; IEC61000-4-2 (ESD): Level 4 ±28kV Contact; IEC61000-4-4 (EFT): 40A - 5/50ns; IEC61000-4-5 (Lightning): 1A - 8/20us; These Devices are Pb | Other | SZESD7241N2T5G |
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SZESD7471N2T5G
onsemi
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1 | ON SEMICONDUCTOR - SZESD7471N2T5G - ESD Protection Device, 15 V, XDFN, 2 Pins, 300 mW, ESD7471 Series | Other | SZESD7471N2T5G |
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SZESD8351P2T5G
onsemi
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1 | These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; Low ESD Clamping Voltage; Protection for the Following IEC Standards: IEC 6100042 (Level 4); Low Capacitance (0.55 pF Max, I/O to GND) | Small Outline Diode Flat Lead | SZESD8351P2T5G |
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SZESD5B5.0ST1G
onsemi
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1 | Cap = 32 pf; Low Leakage; IEC61000-4-2 30 kV contact; Low Clamping Voltage; Long Life | Small Outline Diode Flat Lead | SZESD5B5.0ST1G |
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SZESD7205WTT1G
onsemi
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1 | Low Capacitance (0.4 pF Typical, I/O to GND); Low ESD Clamping Voltage (12V Typical, +16A TLP, I/O to GND); Protection for the Following IEC Standards: IEC 61000−4−2 Level 4 (ESD); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Diode capacitance matching; These Devices are Pb−Free and are RoHS Compliant | SOT23 (3-Pin) | SZESD7205WTT1G |
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SZESD7481MUT5G
onsemi
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1 | These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; UltraLow Capacitance 0.25 pF; Insertion Loss: 0.030 dBm; Low Dynamic Resistance < 1Ω; IEC6100042 Level 4 ESD Protection; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; Low Clamping Voltage; Stand−off Voltage: 3.3 V; Low Leakage; Response Time is < 1 ns; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable | Other | SZESD7481MUT5G |
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SZESD7410N2T5G
onsemi
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1 | Industry Leading Capacitance Linearity Over Voltage; ISO 10605 (ESD) 330 pF/2 k? ±30 kV Contact; Insertion Loss: 0.1 dB at 1 GHz; 0.50 dB at 3 GHz; Ultra−Low Capacitance: < 1.0 pF Max; Low Leakage: < 1 µA; IEC61000−4−2 (ESD): Level 4 ±30 kV Contact; IEC61000−4−4 (EFT): 40 A −5/50 ns; IEC61000−4−5 (Lightning): 1 A (8/20 ?s); SZESD7410MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These | Other | SZESD7410N2T5G |
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SZESD5Z12T1G
onsemi
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1 | Low Clamping Voltage; Small Body Outline Dimensions: 0.047″ x 0.032″ (1.20 mm x 0.80 mm); Low Leakage; Response Time is Typically < 1 ns; IEC61000−4−2 Level 4 ESD Protection and IEC61000−4−4 Level 4 EFT Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Peak Power up to 240 Watts @ 8 x 20 s Pulse; Low Body Height: 0.028″ (0.7 mm); ESD Rating of Class 3 (> 16 kV) per Human Body Model; These Devices are Pb−Fre | Small Outline Diode Flat Lead | SZESD5Z12T1G |
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