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SZESD5Z12T1G - onsemi

Description: Low Clamping Voltage; Small Body Outline Dimensions: 0.047″ x 0.032″ (1.20 mm x 0.80 mm); Low Leakage; Response Time is Typically < 1 ns; IEC61000−4−2 Level 4 ESD Protection and IEC61000−4−4 Level 4 EFT Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Peak Power up to 240 Watts @ 8 x 20 s Pulse; Low Body Height: 0.028″ (0.7 mm); ESD Rating of Class 3 (> 16 kV) per Human Body Model; These Devices are Pb−Fre

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SZESD5Z12T1G - onsemi - PCB symbol
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SZESD5Z12T1G - onsemi PCB footprint - Small Outline Diode Flat Lead - Small Outline Diode Flat Lead - SZESD5Z12T1G
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SZESD5Z12T1G Details

  • Manufacturer Part Number:

    SZESD5Z12T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOD-523 2 LEAD

  • Package Description:

    SOD-523, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    502

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    EXCELLENT CLAMPING CAPABILITY

  • Breakdown Voltage-Min:

    14.1 V

  • Clamping Voltage-Max:

    25 V

  • Configuration:

    SINGLE, 1 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • Forward Voltage-Max (VF):

    1.1 V

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    240 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.5 W

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2, 4-4

  • Rep Pk Reverse Voltage-Max:

    12 V

  • Reverse Current-Max:

    0.01 µA

  • Reverse Test Voltage:

    12 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SZESD5Z12T1G Frequently Asked Questions (FAQs)

  • A good PCB layout for the SZESD5Z12T1G involves keeping the input and output traces as short as possible, using a solid ground plane, and minimizing the distance between the device and the bypass capacitors. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
  • To ensure proper biasing, connect the EN pin to a voltage source that is within the recommended operating range (typically 1.5V to 5.5V). The EN pin should be decoupled with a 10nF capacitor to ground. Additionally, ensure that the input voltage (VIN) is within the recommended operating range (typically 2.5V to 5.5V).
  • The SZESD5Z12T1G has an operating temperature range of -40°C to 125°C. However, the device's performance may degrade at extreme temperatures. It's recommended to operate the device within a temperature range of 0°C to 85°C for optimal performance.
  • The SZESD5Z12T1G has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
  • The recommended input capacitance for the SZESD5Z12T1G is 10uF to 22uF. A larger input capacitance can help to improve the device's power supply rejection ratio (PSRR) and reduce output voltage ripple.

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SZESD5Z12T1G Overview

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