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SZESD8351XV2T1G - onsemi

Description: Low Capacitance (0.55 pF Max, I/O to GND); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Low ESD Clamping Voltage; Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) ISO 10605; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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SZESD8351XV2T1G - onsemi - PCB symbol
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SZESD8351XV2T1G - onsemi PCB footprint - Small Outline Diode Flat Lead - Small Outline Diode Flat Lead - SZESD8351XV2T1G
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SZESD8351XV2T1G Details

  • Manufacturer Part Number:

    SZESD8351XV2T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOD-523-2

  • Manufacturer Package Code:

    502

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    5 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.44

  • Additional Feature:

    ULTRA LOW CAPACITANCE

  • Breakdown Voltage-Max:

    7.8 V

  • Breakdown Voltage-Min:

    5.5 V

  • Breakdown Voltage-Nom:

    7 V

  • Clamping Voltage-Max:

    11.2 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    3.3 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Test Voltage:

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SZESD8351XV2T1G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation. Use thermal interface material (TIM) and a heat sink if possible.
  • Follow onsemi's recommended PCB layout and grounding guidelines. Use shielding, filtering, and decoupling capacitors as needed. Ensure proper cable routing and termination to minimize radiation.
  • Choose X5R or X7R ceramic capacitors with a voltage rating of 10V or higher. For input capacitors, use 10uF to 22uF with an ESR of 10mΩ or less. For output capacitors, use 10uF to 47uF with an ESR of 10mΩ or less.
  • Consult onsemi's application notes and design guides for specific use cases. Adjust the device's configuration, such as the switching frequency, dead time, and voltage settings, to optimize performance for your application.
  • The SZESD8351XV2T1G meets industry standards for reliability, such as AEC-Q100 and IATF 16949. It has undergone rigorous testing for temperature, humidity, and vibration. Consult onsemi's quality and reliability reports for detailed information.

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SZESD8351XV2T1G Overview

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