Please enter a minimum 3 letters or numbers
Technical Content
Part Image

SZESD8351MUT5G - onsemi

Description: Low Capacitance (0.55 pF Max, I/O to GND); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; Low ESD Clamping Voltage; Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) ISO 10605; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

Download SZESD8351MUT5G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
SZESD8351MUT5G - onsemi - PCB symbol
click to zoom
PCB Footprints
SZESD8351MUT5G - onsemi PCB footprint - Other - Other - X3DFN2 0.62x0.32x0.24, 0.35P CASE 152AF ISSUE C_2023
click to zoom
3D Models
SZESD8351MUT5G - onsemi - 3D model - Other - X3DFN2 0.62x0.32x0.24, 0.35P CASE 152AF ISSUE C_2023
click to zoom

SZESD8351MUT5G Details

  • Manufacturer Part Number:

    SZESD8351MUT5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    X3DFN-2

  • Manufacturer Package Code:

    152AF

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    onsemi

  • YTEOL:

    6.79

  • Additional Feature:

    ULTRA LOW CAPACITANCE

  • Breakdown Voltage-Max:

    7.8 V

  • Breakdown Voltage-Min:

    5.5 V

  • Breakdown Voltage-Nom:

    7 V

  • Clamping Voltage-Max:

    11.2 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PBCC-N2

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    3.3 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Test Voltage:

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

SZESD8351MUT5G Frequently Asked Questions (FAQs)

  • A good PCB layout for the SZESD8351MUT5G involves keeping the input and output traces short and separate, using a solid ground plane, and placing bypass capacitors close to the device. A 4-layer PCB with a dedicated power plane and a dedicated ground plane is recommended.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the VEE pin to a stable -5V power supply. The input common-mode voltage should be set to around 2.5V, and the output should be terminated with a 50Ω load to ground.
  • The SZESD8351MUT5G is rated for operation from -40°C to +125°C, but it's recommended to operate within the -20°C to +85°C range for optimal performance and reliability.
  • The SZESD8351MUT5G has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and handle the device by the body or pins, not the leads.
  • The recommended input signal amplitude is 100mV to 1V peak-to-peak, and the frequency range is DC to 500MHz. However, the device can handle input frequencies up to 1GHz with reduced performance.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SZESD8351MUT5G Overview

Use the download button to access the SZESD8351MUT5G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SZESD, or try a keyword search, such as Transient Suppressors

Parts related to SZESD8351MUT5G

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

SZESD8351MUT5G Alternates

Showing results

Image Part Number Model
Part Image ESD8351MUT5G onsemi

Trans Voltage Suppressor Diode, 3.3V V(RWM), Unidirectional, 1 Element, Silicon