Please enter a minimum 3 letters or numbers
Technical Content
Part Image

SZESD7551N2T5G - onsemi

Description: Stand−off Voltage: 3.3 V; Low Leakage: <1µA; IEC61000−4−2 Level 4 ESD Protection; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; Ultra−Low Capacitance (0.35 pF Max); Low Clamping Voltage; Response Time is < 1 ns; Low Dynamic Resistance < 1 Ω; SZESD7551MXWT5G Wettable Flank Package

Download SZESD7551N2T5G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
SZESD7551N2T5G - onsemi - PCB symbol
click to zoom
PCB Footprints
SZESD7551N2T5G - onsemi PCB footprint - Other - Other - X2DFN2 1.0x0.6, 0.65P CASE-714AB ISSUE B
click to zoom
3D Models
SZESD7551N2T5G - onsemi - 3D model - Other - X2DFN2 1.0x0.6, 0.65P CASE-714AB ISSUE B
click to zoom

SZESD7551N2T5G Details

  • Manufacturer Part Number:

    SZESD7551N2T5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    X2DFN-2

  • Package Description:

    X2DFN2, 2 PIN

  • Manufacturer Package Code:

    714AB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

  • Breakdown Voltage-Max:

    7.5 V

  • Breakdown Voltage-Min:

    5 V

  • Breakdown Voltage-Nom:

    6.25 V

  • Clamping Voltage-Max:

    13 V

  • Configuration:

    SINGLE, 1 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PBCC-N2

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Power Dissipation-Max:

    0.25 W

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    3.3 V

  • Reverse Current-Max:

    0.05 µA

  • Reverse Test Voltage:

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

SZESD7551N2T5G Frequently Asked Questions (FAQs)

  • A good PCB layout for the SZESD7551N2T5G involves keeping the input and output traces short and away from each other, using a solid ground plane, and placing bypass capacitors close to the device. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
  • To ensure proper biasing, connect the VCC pin to a stable voltage source, and decouple it with a 10uF capacitor to ground. The EN pin should be tied to a logic high (VCC) to enable the device. The VIN pin should be connected to a stable input voltage source.
  • The SZESD7551N2T5G is rated for operation from -40°C to 125°C. However, the device's performance may degrade at extreme temperatures, and the maximum junction temperature should not exceed 150°C.
  • Yes, the SZESD7551N2T5G is qualified for automotive and high-reliability applications. It meets the AEC-Q100 standard for automotive applications and is manufactured using a process that meets the requirements of high-reliability industries.
  • To troubleshoot issues with the SZESD7551N2T5G, start by verifying the power supply voltage and input voltage levels. Check for proper PCB layout and decoupling. Use an oscilloscope to verify the output voltage and check for noise or oscillations. Consult the datasheet and application notes for more information.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SZESD7551N2T5G Overview

Use the download button to access the SZESD7551N2T5G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SZESD, or try a keyword search, such as Transient Suppressors

Parts related to SZESD7551N2T5G

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

SZESD7551N2T5G Alternates

Showing results

Image Part Number Model
Part Image ESD7551N2T5G onsemi

Trans Voltage Suppressor Diode, 3.3V V(RWM), Bidirectional, 1 Element, Silicon
Part Image SZESD7451N2T5G onsemi

Trans Voltage Suppressor Diode, 3.3V V(RWM), Bidirectional, 1 Element, Silicon
Part Image ESD7451N2T5G onsemi

Trans Voltage Suppressor Diode, 3.3V V(RWM), Bidirectional, 1 Element, Silicon