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SZESD7410MXWT5G - onsemi

Description: Industry Leading Capacitance Linearity Over Voltage; ISO 10605 (ESD) 330 pF/2 k? ±30 kV Contact; Insertion Loss: 0.1 dB at 1 GHz; 0.50 dB at 3 GHz; Ultra−Low Capacitance: < 1.0 pF Max; Low Leakage: < 1 µA; IEC61000−4−2 (ESD): Level 4 ±30 kV Contact; IEC61000−4−4 (EFT): 40 A −5/50 ns; IEC61000−4−5 (Lightning): 1 A (8/20 ?s); SZESD7410MXWT5G Wettable Flank Package; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These

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SZESD7410MXWT5G - onsemi PCB footprint - Other - Other - X2DFNW2 1.0x0.6, 0.65P CASE 711BG ISSUE C
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SZESD7410MXWT5G - onsemi  - 3D model - Other - X2DFNW2 1.0x0.6, 0.65P CASE 711BG ISSUE C
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SZESD7410MXWT5G Details

  • Manufacturer Part Number:

    SZESD7410MXWT5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    X2DFNW2

  • Package Description:

    X2DFNW2, 2 PIN

  • Manufacturer Package Code:

    711BG

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    10 Weeks

  • Date Of Intro:

    2020-04-28

  • Manufacturer:

    onsemi

  • YTEOL:

    6.44

  • Breakdown Voltage-Min:

    10 V

  • Clamping Voltage-Max:

    19.4 V

  • Configuration:

    SINGLE, 1 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-N2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    136 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Power Dissipation-Max:

    0.3 W

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2; ISO 10605

  • Rep Pk Reverse Voltage-Max:

    8 V

  • Reverse Current-Max:

    1 µA

  • Reverse Test Voltage:

    8 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SZESD7410MXWT5G Frequently Asked Questions (FAQs)

  • A good PCB layout for the SZESD7410MXWT5G should consider the following: keep the input and output traces as short as possible, use a solid ground plane, and avoid routing high-frequency signals near the device's sensitive pins. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane to minimize noise and EMI.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet. Typically, this includes connecting the VCC pin to a stable 5V power supply, and the VEE pin to a stable -5V power supply. Additionally, ensure that the input and output pins are properly terminated to prevent signal reflections and oscillations.
  • The SZESD7410MXWT5G is rated for operation from -40°C to +125°C. However, it's recommended to operate the device within a temperature range of 0°C to +85°C for optimal performance and reliability.
  • The SZESD7410MXWT5G has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. This includes using an ESD wrist strap, ESD mat, and ESD-safe tools to prevent damage to the device.
  • The SZESD7410MXWT5G should be stored in a dry, cool place away from direct sunlight and moisture. The recommended storage temperature range is -40°C to +125°C, and the device should be stored in its original packaging or an ESD-safe container to prevent damage.

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