SZESD8551MXWT5G - onsemi

SZESD8551MXWT5G Details

• Manufacturer Part Number:

  SZESD8551MXWT5G

• Brand Name:

  onsemi

• Pbfree Code:

  Yes

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Part Package Code:

  X2DFNW2

• Package Description:

  X2DFNW-2

• Manufacturer Package Code:

  711BG

• Country Of Origin:

  Mainland China

• ECCN Code:

  EAR99

• HTS Code:

  8541.10.00.50

• Factory Lead Time:

  6 Weeks

• Date Of Intro:

  2020-01-27

• Manufacturer:

  onsemi

• YTEOL:

  6.44

• Additional Feature:

  ULTRA LOW CAPACITANCE

• Breakdown Voltage-Max:

  8.3 V

• Breakdown Voltage-Min:

  5.5 V

• Breakdown Voltage-Nom:

  7.9 V

• Clamping Voltage-Max:

  16 V

• Configuration:

  SINGLE, 1 CHANNEL

• Diode Element Material:

  SILICON

• Diode Type:

  TRANS VOLTAGE SUPPRESSOR DIODE

• JESD-30 Code:

  R-PDSO-N2

• JESD-609 Code:

  e4

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Temperature-Max:

  125 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity:

  BIDIRECTIONAL

• Reference Standard:

  AEC-Q101; IEC-61000-4-2

• Rep Pk Reverse Voltage-Max:

  3.3 V

• Reverse Current-Max:

  0.5 µA

• Reverse Test Voltage:

  3.3 V

• Surface Mount:

  YES

• Technology:

  AVALANCHE

• Terminal Finish:

  Matte Tin (Sn) - annealed

• Terminal Form:

  NO LEAD

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  30