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SZESD8011MUT5G - onsemi

Description: SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; Ultra Low Capacitance (0.10 pF Typ, I/O to GND); Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4); Low ESD Clamping Voltage; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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Symbol
SZESD8011MUT5G - onsemi - PCB symbol
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PCB Footprints
SZESD8011MUT5G - onsemi PCB footprint - Other - Other - SZESD8011MUT5G
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SZESD8011MUT5G - onsemi - 3D model - Other - SZESD8011MUT5G
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SZESD8011MUT5G Details

  • Manufacturer Part Number:

    SZESD8011MUT5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    X3DFN-2

  • Package Description:

    X3DFN2, 2 PIN

  • Manufacturer Package Code:

    152AF

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Additional Feature:

    ULTRA LOW CAPACITANCE

  • Breakdown Voltage-Min:

    6.5 V

  • Breakdown Voltage-Nom:

    7.3 V

  • Clamping Voltage-Max:

    17.2 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PBCC-N2

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    34 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2

  • Rep Pk Reverse Voltage-Max:

    5.5 V

  • Reverse Current-Max:

    1 µA

  • Reverse Test Voltage:

    5.5 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

SZESD8011MUT5G Frequently Asked Questions (FAQs)

  • A good PCB layout for the SZESD8011MUT5G should prioritize short traces, minimal vias, and a solid ground plane to reduce noise and EMI. It's also recommended to follow the layout guidelines provided in the onsemi application note AND9405/D.
  • To ensure proper biasing, follow the recommended biasing circuit shown in the datasheet, and make sure to provide a stable voltage supply to the VCC pin. Additionally, ensure that the input signals are within the recommended voltage range and that the device is operated within the specified temperature range.
  • The maximum allowable voltage on the input pins of the SZESD8011MUT5G is 5.5V. Exceeding this voltage may cause damage to the device or affect its performance.
  • The SZESD8011MUT5G is rated for operation up to 125°C. However, it's essential to ensure that the device is properly derated for high-temperature operation to avoid performance degradation or damage. Consult the datasheet and onsemi's application notes for guidance on high-temperature operation.
  • To troubleshoot issues with the SZESD8011MUT5G, start by verifying the input signals, power supply, and PCB layout. Check for any signs of physical damage, overheating, or electrical overstress. Use a logic analyzer or oscilloscope to monitor the input and output signals, and consult the datasheet and onsemi's application notes for guidance on troubleshooting and debugging.

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SZESD8011MUT5G Overview

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