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SZESD7571MXWT5G - onsemi

Description: Industry Leading Capacitance Linearity Over Voltage; Ultra−Low Capacitance: 0.35 pF Max; Stand−off Voltage: 5.3 V; Low Leakage: < 1 nA; Low Dynamic Resistance: < 1 Ω; IEC61000−4−2 Level 4 ESD Protection; 1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant; SZESD7571MXWT5G Wettable Flank Pa

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PCB Footprints
SZESD7571MXWT5G - onsemi PCB footprint - Other - Other - X2DFNW2 1.00x0.60x0.37, 0.65P CASE 711BG ISSUE D_2024-2
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SZESD7571MXWT5G Details

  • Manufacturer Part Number:

    SZESD7571MXWT5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    X2DFNW2

  • Manufacturer Package Code:

    711BG

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Date Of Intro:

    2020-04-28

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE

  • Breakdown Voltage-Min:

    7 V

  • Clamping Voltage-Max:

    15 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-N2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Power Dissipation-Max:

    0.3 W

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    5.3 V

  • Reverse Current-Max:

    0.05 µA

  • Reverse Test Voltage:

    5.3 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SZESD7571MXWT5G Frequently Asked Questions (FAQs)

  • A good PCB layout for the SZESD7571MXWT5G involves keeping the input and output traces short and separate, using a solid ground plane, and placing bypass capacitors close to the device. A 4-layer PCB with a dedicated power plane and a dedicated ground plane is recommended.
  • To ensure proper power-up and power-down of the SZESD7571MXWT5G, follow the recommended power-up sequence: VCC, then VIN, and finally EN. During power-down, reverse the sequence. Also, ensure that the input voltage ramps up and down slowly to prevent damage to the device.
  • The maximum junction temperature (TJ) of the SZESD7571MXWT5G is 150°C. However, it's recommended to keep the junction temperature below 125°C for optimal performance and reliability.
  • Yes, the SZESD7571MXWT5G is suitable for high-reliability and automotive applications. It's AEC-Q100 qualified and meets the requirements for automotive-grade devices. However, ensure that you follow the recommended operating conditions and design guidelines to ensure reliability and performance.
  • To troubleshoot issues with the SZESD7571MXWT5G, start by checking the input voltage, output voltage, and enable pin. Verify that the device is properly powered up and that the input voltage is within the recommended range. Check for oscillations or noise on the output voltage and ensure that the output capacitor is properly sized. If issues persist, consult the datasheet and application notes for guidance.

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