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SZESDM3551N2T5G - onsemi

Description: 9.9 A Peak Pulse Current Capable, 8x20us Surge; 8.5 V Clamping Voltage @ 9.9 A, 8x20us Surge; 0201 Form Factor

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SZESDM3551N2T5G - onsemi PCB footprint - Other - Other - X2DFN2 1.0x0.6, 0.65P CASE 714AB ISSUE
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SZESDM3551N2T5G - onsemi  - 3D model - Other - X2DFN2 1.0x0.6, 0.65P CASE 714AB ISSUE
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SZESDM3551N2T5G Details

  • Manufacturer Part Number:

    SZESDM3551N2T5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    X2DFN-2

  • Manufacturer Package Code:

    714AB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

  • Breakdown Voltage-Max:

    7 V

  • Breakdown Voltage-Min:

    5.6 V

  • Breakdown Voltage-Nom:

    6.3 V

  • Clamping Voltage-Max:

    8.2 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PBCC-N2

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Power Dissipation-Max:

    0.25 W

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2, 4-5; ISO 10605

  • Rep Pk Reverse Voltage-Max:

    5.5 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    5.5 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    NICKEL PALLADIUM GOLD

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

SZESDM3551N2T5G Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation. Use thermal interface material (TIM) and a heat sink if possible.
  • Follow onsemi's recommended PCB layout and grounding guidelines. Use shielding, filtering, and decoupling capacitors as necessary. Ensure proper cable routing and termination to minimize radiation.
  • onsemi follows industry-standard reliability testing protocols, such as AEC-Q100 and JEDEC. They also implement rigorous quality control measures, including 100% automated inspection and testing, to ensure high-quality products.
  • The device is rated for operation up to 150°C junction temperature. However, derating is required above 125°C. Consult the datasheet for specific thermal derating curves and ensure proper thermal management in high-temperature applications.
  • Use onsemi's application notes and design guides for troubleshooting guidance. Common pitfalls include incorrect PCB layout, inadequate power supply decoupling, and insufficient thermal management. Consult onsemi's support resources and FAEs for assistance.

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SZESDM3551N2T5G Overview

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