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SZNUP2105LT1G - onsemi

Description: Low Capacitance High-Speed CAN Data Rates; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; SOT-23 pacakage allows two separate bi-directional configurations; 350 W Peak Power Dissipation per line (8x20 us waveform); Low reverse leakage current (< 100 nA); IEC-61000-4-2: Level 4 Compatible.; IEC-61000-4-4: 5/50 ns 50 A Max.; IEC-61000-4-5: 8.0 A (8x20 us); ISO 7637−2 Pulse 2a: Repetitive Load Switch Disconnect, 9.5 A;

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PCB Footprints
SZNUP2105LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AR
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3D Models
SZNUP2105LT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AR
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SZNUP2105LT1G Details

  • Manufacturer Part Number:

    SZNUP2105LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    onsemi

  • YTEOL:

    6.38

  • Additional Feature:

    LOW CAPACITANCE

  • Breakdown Voltage-Max:

    32 V

  • Breakdown Voltage-Min:

    26.2 V

  • Breakdown Voltage-Nom:

    29.1 V

  • Clamping Voltage-Max:

    44 V

  • Configuration:

    COMMON ANODE, 2 ELEMENTS, 2 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Peak Rev Power Dis-Max:

    350 W

  • Number of Elements:

    2

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Reference Standard:

    AEC-Q101; IEC-61000-4-2, 4-4, 4-5

  • Rep Pk Reverse Voltage-Max:

    24 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    24 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SZNUP2105LT1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is not explicitly stated in the datasheet. However, it can be estimated by considering the device's voltage, current, and power ratings. Consult with onsemi's application engineers for specific guidance.
  • Yes, the SZNUP2105LT1G is AEC-Q101 qualified, making it suitable for automotive and high-reliability applications. However, additional testing and validation may be required for specific use cases.
  • Follow proper ESD handling procedures during assembly and storage. The device has built-in ESD protection, but additional external protection may be necessary depending on the application.

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SZNUP2105LT1G Overview

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Trans Voltage Suppressor Diode, 350W, 24V V(RWM), Bidirectional, 2 Element, Silicon, TO-236AB