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SZNUP3105LT3G
onsemi
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1 | 350 W Peak Power Dissipation per Line (8/20 µs Waveform); Low Reverse Leakage Current (< 100 nA); 30 pF Overall Capacitance with Diode Capacitance Matching; Flammability Rating UL 94 V−0; IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lightning) 8.0 A (8/20 µs); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free an | SOT23 (3-Pin) | SZNUP3105LT3G |
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SZNUP2124
onsemi
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1 | 28V CAN-FD ESD PROTECTION IN WDF | Other | SZNUP2124 |
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SZNUP4114HMR6T1G
onsemi
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1 | Low Clamping Voltage; Small Body Outline Dimensions on SC88 Package:0.082 x 0.078 (2.10 mm x 1.25 mm); Low Body Height: 0.043 (1.10 mm); Standoff Voltage: 5.5 V; Low Leakage; Response Time is Typically < 1.0 ns; IEC6100042 Level 4 ESD Protection; These Devices are PbFree and are RoHS Compliant; AECQ101 Qualified and PPAP Capable for SZNUP4114; Meets UL 94 V-0; SZ prefix for automotive and other applications requiring unique site and control change requirements | SOT23 (6-Pin) | SZNUP4114HMR6T1G |
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SZNUP2105LT3G
onsemi
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1 | Low Capacitance High-Speed CAN Data Rates; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; SOT-23 pacakage allows two separate bi-directional configurations; 350 W Peak Power Dissipation per line (8x20 us waveform); Low reverse leakage current (< 100 nA); IEC-61000-4-2: Level 4 Compatible.; IEC-61000-4-4: 5/50 ns 50 A Max.; IEC-61000-4-5: 8.0 A (8x20 us); ISO 7637−2 Pulse 2a: Repetitive Load Switch Disconnect, 9.5 A; | SOT23 (3-Pin) | SZNUP2105LT3G |
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SZNUP3125WTT1G
onsemi
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1 | 120 W Peak Power Dissipation per Line (8/20 µs Waveform); 10 pF Overall Capacitance with Diode Capacitance Matching; Low Reverse Leakage Current (< 100 nA); IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lightning) 3.0 A (8/20 µs); Flammability Rating UL 94 V−0; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free an | SOT23 (3-Pin) | SZNUP3125WTT1G |
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SZNUP2125WTT1G
onsemi
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1 | 200W Peak Power Dissipation per Line (8/20us waveform); Diode Capacitance Matching; Low Reverse Leakage Current (<100nA); IEC Compatibility: IEC61000-4-2 (ESD): Level 4; IEC Compatibility: IEC61000-4-4 (EFT): 50A (5/50ns); IEC Compatibility: IECT61000-4-5 (Lightning) 3.0A (8/20us); ISO7637 Non repetitive EMI Surge Pulse 2, 8.0A (1/50us); ISO7637 Repetitive EFT EMI Surge Pulses, 50A (5/50us); AEC-Q101 Qualified and PPAP Capable; Pb-Free Devices; Flammability Rating UL 94 V-0 | SOT23 (3-Pin) | SZNUP2125WTT1G |
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SZNUP2105LT1G
onsemi
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1 | Low Capacitance High-Speed CAN Data Rates; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; SOT-23 pacakage allows two separate bi-directional configurations; 350 W Peak Power Dissipation per line (8x20 us waveform); Low reverse leakage current (< 100 nA); IEC-61000-4-2: Level 4 Compatible.; IEC-61000-4-4: 5/50 ns 50 A Max.; IEC-61000-4-5: 8.0 A (8x20 us); ISO 7637−2 Pulse 2a: Repetitive Load Switch Disconnect, 9.5 A; | SOT23 (3-Pin) | SZNUP2105LT1G |
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SZNUP4114UCLW1T2G
onsemi
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1 | Low Clamping Voltage; Small Body Outline Dimensions on SC88 Package:0.082 x 0.078 (2.10 mm x 1.25 mm); Low Body Height: 0.043 (1.10 mm); Standoff Voltage: 5.5 V; Low Leakage; Response Time is Typically < 1.0 ns; IEC6100042 Level 4 ESD Protection; These Devices are PbFree and are RoHS Compliant; AECQ101 Qualified and PPAP Capable for SZNUP4114; Meets UL 94 V-0; SZ prefix for automotive and other applications requiring unique site and control change requirements | SOT23 (6-Pin) | SZNUP4114UCLW1T2G |
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SZNUP1105LT1G
onsemi
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1 | Low Reverse Leakage Current (< 100 nA); IEC Compatibility: -IEC 61000-4-2 (ESD): Level 4 -IEC 61000-4-4 (EFT): 40 A - 5/50 ns -IEC 61000-4-5 (Lighting): 8.0 A (8/20 s); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; SOT-23 Package Allows One Separate Bidirectional Configuration; 350 W Peak Power Dissipation per Line (8 x 20 usec Waveform); ISO 7637−3, Repetitive Electrical Fast Transient (EFT) TBD EMI Surge Pulses; | SOT23 (3-Pin) | SZNUP1105LT1G |
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SZNUP2115LT1G
onsemi
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1 | 200 W Peak Power Dissipation per Line (8/20 s Waveform); Diode Capacitance Matching; Low Reverse Leakage Current (< 100 nA); IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lighting) 3.0 A (8/20 s); Low Capacitance High−Speed FlexRay Data Rates; ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A (1/50 s); ISO 7637−3, Repetitive Electrical Fast Transient (EFT) EMI Surge Pulses, 50 A (5/50 ns); Flammability Rating UL 94 V−0; SZ Prefix for Automotive and | SOT23 (3-Pin) | SZNUP2115LT1G |
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SZNUPH1128HT1G
onsemi
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1 | IVN Bus Protector, Single Line LIN & Dual Line CAN AEC-Q101.revD Qualified, +175C | Small Outline Diode | SZNUPH1128HT1G |
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SZNUP1301ML3T1G
onsemi
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1 | Low Capacitance; Single Package Integration Design; Provides ESD Protection for JEDEC Standards JESD22; Protection for IEC61000-4-2 (Level 4); Ensures Data Line Speed and Integrity; Fewer Components and Less Board Space; Direct the Transient to Either Positive Side or to the Ground; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | SOT23 (3-Pin) | SZNUP1301ML3T1G |
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SZNUP2125WTT3G
onsemi
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1 | 200W Peak Power Dissipation per Line (8/20us waveform); Diode Capacitance Matching; Low Reverse Leakage Current (<100nA); IEC Compatibility: IEC61000-4-2 (ESD): Level 4; IEC Compatibility: IEC61000-4-4 (EFT): 50A (5/50ns); IEC Compatibility: IECT61000-4-5 (Lightning) 3.0A (8/20us); ISO7637 Non repetitive EMI Surge Pulse 2, 8.0A (1/50us); ISO7637 Repetitive EFT EMI Surge Pulses, 50A (5/50us); AEC-Q101 Qualified and PPAP Capable; Pb-Free Devices; Flammability Rating UL 94 V-0 | SOT23 (3-Pin) | SZNUP2125WTT3G |
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SZNUP3105LT1G
onsemi
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1 | 350 W Peak Power Dissipation per Line (8/20 µs Waveform); Low Reverse Leakage Current (< 100 nA); 30 pF Overall Capacitance with Diode Capacitance Matching; Flammability Rating UL 94 V−0; IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lightning) 8.0 A (8/20 µs); SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free an | SOT23 (3-Pin) | SZNUP3105LT1G |
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SZNUP2128WTT1G
onsemi
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1 | Trans Voltage Suppressor Diode, 165W, 26.5V V(RWM), Bidirectional, 2 Element, Silicon | SZNUP2128WTT1G |
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SZNUP2242WTT1G
onsemi
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1 | Trans Voltage Suppressor Diode, 200W, 24V V(RWM), Bidirectional, 2 Element, Silicon | SZNUP2242WTT1G |
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SZNUP4301MR6T1G
onsemi
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1 | Trans Voltage Suppressor Diode, 70V V(RWM), Bidirectional, 8 Element, Silicon | SZNUP4301MR6T1G |
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SZNUP1128WTT1G
onsemi
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1 | Trans Voltage Suppressor Diode, 165W, 26.5V V(RWM), Bidirectional, 1 Element, Silicon | SZNUP1128WTT1G |
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SZNUP2301MW6T1G
onsemi
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1 | Low Capacitance (2.0 pF Max Between I/O Lines; Single Package Integration Design; Provides ESD Protection for JEDEC Standards JESD22; Protection for IEC61000-4-2 (Level 4); Ensures Data Line Speed and Integrity; Directs the Transient to Either Positive Side or to Ground; AEC-Q101 Qualified and PPAP Capable; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | SZNUP2301MW6T1G |
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SZNUP2124MXWTAG
onsemi
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1 | Trans Voltage Suppressor Diode, 120W, 24V V(RWM), Bidirectional, 2 Element, Silicon | SZNUP2124MXWTAG |
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SZNUP3125WTT3G
onsemi
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1 | 120 W Peak Power Dissipation per Line (8/20 µs Waveform); 10 pF Overall Capacitance with Diode Capacitance Matching; Low Reverse Leakage Current (< 100 nA); IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 50 A – 5/50 ns − IEC 61000−4−5 (Lightning) 3.0 A (8/20 µs); Flammability Rating UL 94 V−0; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free an | SZNUP3125WTT3G |
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SZNUP1128HT1G
onsemi
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1 | Low Reverse Leakage Current (< 100 nA); IEC Compatibility: IEC 61000−4−2 (ESD): Level 4 IEC 61000−4−4 (EFT): 50 A (5/50 ns) IEC 61000−4−5 (Lighting) 3.5 A (8/20 µs); ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A (1/50 µs); ISO 7637−3, Repetitive Electrical Fast Transient (EFT) EMI Surge Pulses, 50 A (5/50 ns); +175°C TJ(MAX) rating; SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These are Pb−Free Devices; Flamm | SZNUP1128HT1G |
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SZNUP4304MR6T1G
onsemi
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1 | Trans Voltage Suppressor Diode, 70V V(RWM), Unidirectional, 8 Element, Silicon | SZNUP4304MR6T1G |
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SZNUP2201MR6T1G
onsemi
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1 | Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon | SZNUP2201MR6T1G |
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SZNUP4016P5T5G
onsemi
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1 | Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional, 4 Element, Silicon | SZNUP4016P5T5G |
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