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TBC857B,LM - Toshiba

Description: Bipolar Transistors - BJT BJT PNP -0.15A -50V

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Symbol
TBC857B,LM - Toshiba - PCB symbol
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PCB Footprints
TBC857B,LM - Toshiba PCB footprint - Other - Other - 2-3AB1A
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3D Models
TBC857B,LM - Toshiba - 3D model - Other - 2-3AB1A
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TBC857B,LM Details

  • Manufacturer Part Number:

    TBC857B,LM

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.15 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    210

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    PNP

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    80 MHz

TBC857B,LM Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the TBC857B,LM is 4.5V to 5.5V.
  • To ensure reliability in high-temperature applications, it is recommended to follow proper thermal design guidelines, including providing adequate heat sinking and ensuring good airflow around the device.
  • The maximum current rating for the TBC857B,LM is 2A per channel, with a total current rating of 4A for both channels.
  • To protect the TBC857B,LM from ESD, it is recommended to follow proper handling and storage procedures, including using anti-static bags or tubes, and grounding oneself before handling the device.
  • The typical rise and fall time for the TBC857B,LM is 10ns and 15ns, respectively.

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TBC857B,LM Overview

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