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TC58BVG2S0HBAI4 - Toshiba

Description: EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM

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PCB Footprints
TC58BVG2S0HBAI4 - Toshiba PCB footprint - BGA - BGA - P-TFBGA63-0911-0.80CZ-2
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3D Models
TC58BVG2S0HBAI4 - Toshiba  - 3D model - BGA - P-TFBGA63-0911-0.80CZ-2
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TC58BVG2S0HBAI4 Details

  • Manufacturer Part Number:

    TC58BVG2S0HBAI4

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    BGA

  • Package Description:

    TFBGA-63

  • Pin Count:

    63

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Toshiba America Electronic Components

  • Access Time-Max:

    25 ns

  • JESD-30 Code:

    R-PBGA-B63

  • Length:

    11 mm

  • Memory Density:

    4294967296 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    63

  • Number of Words:

    536870912 words

  • Number of Words Code:

    512000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    512MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA63,10X12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3.3 V

  • Seated Height-Max:

    1 mm

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.03 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Type:

    NAND TYPE

  • Width:

    9 mm

  • Write Cycle Time-Max (tWC):

    0.000025 ms

  • Write Protection:

    HARDWARE

TC58BVG2S0HBAI4 Frequently Asked Questions (FAQs)

  • Toshiba recommends following the PCB layout guidelines provided in the datasheet, including keeping the power and ground planes as close as possible to the device, and using thermal vias to dissipate heat. Additionally, a thermal pad on the bottom of the device should be connected to a solid ground plane to improve heat dissipation.
  • The TC58BVG2S0HBAI4 requires a specific power-up and power-down sequencing to ensure proper operation. It is recommended to power up the device in the following order: VCC, VCCQ, and then CLK. During power-down, the sequence should be reversed. Additionally, the device should be powered down slowly to prevent damage.
  • While the datasheet specifies an operating temperature range of -40°C to 85°C, it's essential to note that the device's performance may degrade at extreme temperatures. Engineers should consider the device's thermal characteristics and ensure proper thermal management to maintain optimal performance.
  • The TC58BVG2S0HBAI4 does not have built-in error correction mechanisms. Engineers should implement external error detection and correction mechanisms, such as ECC (Error-Correcting Code) or CRC (Cyclic Redundancy Check), to ensure data integrity and reliability.
  • The TC58BVG2S0HBAI4 is a high-speed device that can be susceptible to EMI. Engineers should take measures to minimize EMI, such as using shielding, grounding, and decoupling capacitors, and ensuring that the device is placed away from noise sources. Additionally, the device should be designed to meet EMC standards and regulations.

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