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TC58NVG0S3EBAI4 - Toshiba

Description: Toshiba TC58NVG0S3EBAI4, Parallel NAND 1 Gbyte Flash Memory, 25ns, 63-Pin TFBGA

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PCB Footprints
TC58NVG0S3EBAI4 - Toshiba PCB footprint - BGA - BGA - P-TFBGA63-0911-0.80CZ-4
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3D Models
TC58NVG0S3EBAI4 - Toshiba  - 3D model - BGA - P-TFBGA63-0911-0.80CZ-4
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TC58NVG0S3EBAI4 Details

  • Manufacturer Part Number:

    TC58NVG0S3EBAI4

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    BGA

  • Package Description:

    TFBGA-63

  • Pin Count:

    63

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B63

  • Length:

    11 mm

  • Memory Density:

    1073741824 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    63

  • Number of Words:

    134217728 words

  • Number of Words Code:

    128000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    128MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA63,10X12,32

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3.3 V

  • Seated Height-Max:

    1 mm

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.03 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    BOTTOM

  • Type:

    NAND TYPE

  • Width:

    9 mm

  • Write Protection:

    HARDWARE

TC58NVG0S3EBAI4 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the TC58NVG0S3EBAI4 is 2.7V to 3.6V.
  • The power-up sequence should be VCC first, then CLK, and then CS#. The power-down sequence should be CS# high, then CLK low, and finally VCC off.
  • The maximum clock frequency supported by the TC58NVG0S3EBAI4 is 104 MHz.
  • Use the WP# pin to enable or disable write protection. When WP# is low, the device is in write-protect mode. You can also use the software write protection feature by setting the WP bit in the status register.
  • The typical programming time for the TC58NVG0S3EBAI4 is 10-15 microseconds per 256-byte block.

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TC58NVG0S3EBAI4 Overview

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