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TC58NVG1S3ETA00 - Toshiba

Description: NAND Flash 3.3V 2Gb 43nm SLC NAND (EEPROM)

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TC58NVG1S3ETA00 Details

  • Manufacturer Part Number:

    TC58NVG1S3ETA00

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TSOP1

  • Package Description:

    TSOP-48

  • Pin Count:

    48

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • JESD-30 Code:

    R-PDSO-G48

  • JESD-609 Code:

    e3

  • Length:

    18.4 mm

  • Memory Density:

    2147483648 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Number of Functions:

    1

  • Number of Terminals:

    48

  • Number of Words:

    268435456 words

  • Number of Words Code:

    256000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    70 °C

  • Organization:

    256MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSSOP

  • Package Equivalence Code:

    TSSOP48,.8,20

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    3.3 V

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.2 mm

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.03 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    COMMERCIAL

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    DUAL

  • Type:

    NAND TYPE

  • Width:

    12 mm

  • Write Cycle Time-Max (tWC):

    0.000025 ms

  • Write Protection:

    HARDWARE

TC58NVG1S3ETA00 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the TC58NVG1S3ETA00 is -40°C to 85°C.
  • The power-up and power-down sequences for the TC58NVG1S3ETA00 should be handled according to the datasheet, with a slow ramp-up and ramp-down of the power supply voltage to prevent damage to the device.
  • The maximum allowable voltage for the TC58NVG1S3ETA00 is 3.6V, and exceeding this voltage may cause damage to the device.
  • To ensure data integrity and prevent data corruption during power-down or power-up sequences, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
  • The recommended storage temperature range for the TC58NVG1S3ETA00 is -40°C to 125°C.

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