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TIP110G - onsemi

Description: Compact TO-220 AB Package; High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Collector-Emitter Sustaining Voltage @ 30 mA VCEO(sus) = 60 Vdc (Min) TIP110, TIP115 VCEO(sus) = 80 Vdc (Min) TIP111, TIP116 VCEO(sus) = 100 Vdc (Min) TIP112, TIP117; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc; Pb-Free Packages are Available

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TIP110G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TIP31G
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TIP110G - onsemi  - 3D model - Transistor Outline, Vertical - TIP31G
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TIP110G Details

  • Manufacturer Part Number:

    TIP110G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    500

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

TIP110G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the TIP110G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.
  • To ensure the TIP110G is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is between 0.6V to 0.8V, and the collector-emitter voltage (Vce) is at least 1V to 2V higher than the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • For optimal thermal performance, it is recommended to use a PCB layout with a large copper area for heat dissipation, and to use thermal vias to connect the copper area to a heat sink or a metal plate. Additionally, ensure that the device is mounted with a thermally conductive material, such as thermal tape or thermal grease, to improve heat transfer.
  • While the TIP110G is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as turn-on and turn-off times, may not be as optimal as those of a dedicated switching transistor. Additionally, the device's maximum collector current and power dissipation ratings should be carefully considered to ensure reliable operation.
  • To protect the TIP110G from electrostatic discharge (ESD), it is recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit. Additionally, ensure that the PCB layout and assembly process follow ESD-safe handling and storage procedures to prevent damage to the device.

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TIP110G Overview

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TIP110G Alternates

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Part Image TIP110AF onsemi

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Part Image TIP110AJ onsemi

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Part Image TIP110AU onsemi

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Part Image TIP110BV onsemi

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Part Image TIP110AS onsemi

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

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