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TIP111G - onsemi

Description: Compact TO-220 AB Package; High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Collector-Emitter Sustaining Voltage @ 30 mA VCEO(sus) = 60 Vdc (Min) TIP110, TIP115 VCEO(sus) = 80 Vdc (Min) TIP111, TIP116 VCEO(sus) = 100 Vdc (Min) TIP112, TIP117; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc; Pb-Free Packages are Available

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PCB Footprints
TIP111G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220_1
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TIP111G - onsemi  - 3D model - Transistor Outline, Vertical - TO−220_1
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TIP111G Details

  • Manufacturer Part Number:

    TIP111G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    500

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

TIP111G Frequently Asked Questions (FAQs)

  • The TIP111G can operate from -65°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
  • To ensure proper biasing, the base-emitter voltage (VBE) should be around 0.7V, and the collector-emitter voltage (VCE) should be at least 1V. Additionally, the base current should be limited to prevent overheating.
  • The maximum collector current (IC) rating for the TIP111G is 1A, and the maximum peak current rating is 2A.
  • To protect the TIP111G from EOS, use a voltage regulator to limit the voltage, add a current-limiting resistor in series with the device, and consider using a transient voltage suppressor (TVS) diode for overvoltage protection.
  • The typical switching time for the TIP111G is around 1-2 microseconds, but this can vary depending on the specific application and operating conditions.

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TIP111G Overview

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Part Image TIP111 General Transistor Corp

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Part Image TIP111 Microsemi Corporation (now Microchip)

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, NPN, Silicon, TO-220, Plastic/Epoxy, 3 Pin

Part Image TIP111 Bourns Inc

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image TIP111 Baneasa SA

Power Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image TIP111 onsemi

Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for TIP111G, check out Findchips.com