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TIP112G - onsemi

Description: Compact TO-220 AB Package; High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Collector-Emitter Sustaining Voltage @ 30 mA VCEO(sus) = 60 Vdc (Min) TIP110, TIP115 VCEO(sus) = 80 Vdc (Min) TIP111, TIP116 VCEO(sus) = 100 Vdc (Min) TIP112, TIP117; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc; Pb-Free Packages are Available

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PCB Footprints
TIP112G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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TIP112G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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TIP112G Details

  • Manufacturer Part Number:

    TIP112G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    500

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    25 MHz

TIP112G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the TIP112G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.
  • To ensure the TIP112G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is between 0.6V to 0.8V, and the collector-emitter voltage (VCE) is at least 1V to 2V higher than the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • The recommended heatsink design for the TIP112G involves using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and a heatsink with a thermal resistance of less than 10°C/W. The heatsink should also be designed to provide adequate airflow to dissipate heat efficiently.
  • Yes, the TIP112G can be used as a switch, but it's essential to consider the device's switching characteristics, such as the turn-on and turn-off times, and the maximum switching frequency. Additionally, you should ensure that the device is properly biased and that the collector current is limited to prevent overheating.
  • To protect the TIP112G from electrostatic discharge (ESD), you should handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package. Additionally, you should use ESD protection devices, such as TVS diodes, in the circuit design to prevent ESD damage.

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TIP112G Overview

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