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TIP120G - onsemi

Description: Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc; Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 60 Vdc (Min) TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) TIP121, TIP126 VCEO(sus) = 100 Vdc (Min) TIP122, TIP127; Compact TO-220 AB Package; High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc; Pb-Free Packages are Available

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Symbol
TIP120G - onsemi - PCB symbol
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PCB Footprints
TIP120G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 CASE 221A−09 ISSUE AH
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3D Models
TIP120G - onsemi - 3D model - Transistor Outline, Vertical - TO−220 CASE 221A−09 ISSUE AH
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TIP120G Details

  • Manufacturer Part Number:

    TIP120G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    65 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

TIP120G Frequently Asked Questions (FAQs)

  • The maximum collector current for each Darlington pair is 5A, but this can be limited by the power dissipation and thermal characteristics of the device.
  • To ensure linear operation, the base-emitter voltage (VBE) should be around 2.5V to 3.5V, and the collector-emitter voltage (VCE) should be around 1V to 5V. The base current should be limited to around 1/10th of the collector current.
  • The TIP120G is not designed for high-frequency switching applications. It is suitable for low-frequency switching applications up to around 10kHz. For higher frequency applications, a different device may be more suitable.
  • Yes, the TIP120G can be used as a switch for inductive loads, but care must be taken to ensure that the device is properly protected from back-EMF and voltage spikes. A flyback diode or snubber circuit may be required to prevent damage to the device.
  • The thermal resistance of the TIP120G is around 30°C/W for the junction-to-ambient thermal resistance (RθJA) and around 10°C/W for the junction-to-case thermal resistance (RθJC).

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TIP120G Overview

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For a full list of alternate parts for TIP120G, check out Findchips.com