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TIP121G - onsemi

Description: Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc; Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 60 Vdc (Min) TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) TIP121, TIP126 VCEO(sus) = 100 Vdc (Min) TIP122, TIP127; Compact TO-220 AB Package; High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc; Pb-Free Packages are Available

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TIP121G - onsemi - PCB symbol
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PCB Footprints
TIP121G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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TIP121G - onsemi - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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TIP121G Details

  • Manufacturer Part Number:

    TIP121G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    65 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

TIP121G Frequently Asked Questions (FAQs)

  • The maximum collector current for each Darlington pair is 500 mA. However, it's essential to consider the power dissipation and thermal management to ensure reliable operation.
  • The base-emitter voltage (VBE) for the TIP121G is typically around 1.8-2.2 V. You can calculate it using the formula: VBE = VCC - (IC x Rb), where VCC is the supply voltage, IC is the collector current, and Rb is the base resistor.
  • The minimum input voltage required to turn on the Darlington pair is around 1.4-1.6 V. However, it's recommended to use a minimum of 2.5 V to ensure reliable switching.
  • While the TIP121G can be used for switching applications, it's not ideal for high-frequency applications due to its relatively slow switching times (around 10-20 μs). For high-frequency applications, consider using a faster switching transistor or a dedicated high-frequency switch.
  • To protect the TIP121G from back-EMF, use a flyback diode (also known as a freewheeling diode) in parallel with the load. This diode allows the current to flow back to the power supply when the transistor is turned off, preventing voltage spikes that could damage the transistor.

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TIP121G Overview

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For a full list of alternate parts for TIP121G, check out Findchips.com