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TIP122 - onsemi

Description: Obsolete - 5.0 A, 100 V NPN Darlington Bipolar Power Transistor

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Symbol
TIP122 - onsemi - PCB symbol
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PCB Footprints
TIP122 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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3D Models
TIP122 - onsemi - 3D model - Transistor Outline, Vertical - TO-220 CASE 221A ISSUE AK
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TIP122 Details

  • Manufacturer Part Number:

    TIP122

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    65 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

TIP122 Frequently Asked Questions (FAQs)

  • The maximum collector-emitter voltage (Vce) for the TIP122 is 100V. Exceeding this voltage may damage the transistor.
  • The power dissipation of the TIP122 can be calculated using the formula: Pd = Vce x Ic, where Vce is the collector-emitter voltage and Ic is the collector current. Make sure to stay within the maximum power dissipation rating of 65W.
  • The minimum base current required to fully saturate the TIP122 depends on the collector current. A general rule of thumb is to use a base current of at least 1/10th of the collector current. For example, if the collector current is 5A, the base current should be at least 500mA.
  • The TIP122 is not suitable for high-frequency switching applications due to its relatively slow switching times (turn-on time: 3us, turn-off time: 10us). It's better suited for low-frequency switching or linear amplifier applications.
  • To protect the TIP122 from overheating, ensure good heat sinking, use a heat sink with a thermal resistance of 5°C/W or less, and keep the ambient temperature below 25°C. Also, avoid exceeding the maximum power dissipation rating.

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TIP122 Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like TIP12, or try a keyword search, such as Power Bipolar Transistors

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TIP122 Alternates

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Part Image TIP122 Rectron Semiconductor

Power Bipolar Transistor, 5A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Part Image TIP122 Motorola Semiconductor Products

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Part Image TIP122 Samsung Semiconductor

Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Part Image TIP122 WEITRON INTERNATIONAL CO., LTD.

Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Part Image TIP122 General Transistor Corp

Power Bipolar Transistor, 5A I(C), NPN
For a full list of alternate parts for TIP122, check out Findchips.com