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TIP127G - onsemi

Description: Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc; Collector-Emitter Sustaining Voltage @ 100 mA VCEO(sus) = 60 Vdc (Min) TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) TIP121, TIP126 VCEO(sus) = 100 Vdc (Min) TIP122, TIP127; Compact TO-220 AB Package; High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc; Pb-Free Packages are Available

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PCB Footprints
TIP127G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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3D Models
TIP127G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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TIP127G Details

  • Manufacturer Part Number:

    TIP127G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    65 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

TIP127G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the TIP127G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to keep the device within the specified thermal boundaries to ensure reliable operation.
  • To ensure the TIP127G is properly biased for linear operation, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to a value that ensures the device operates within its linear region. Additionally, it's crucial to ensure the device is not over-driven or under-driven, as this can lead to non-linear operation or even device damage.
  • For optimal performance and reliability, it's recommended to follow good PCB layout practices, such as keeping the device away from heat sources, using a solid ground plane, and minimizing thermal resistance. A heat sink or thermal pad can be used to improve heat dissipation, and the device should be mounted on a PCB with a high thermal conductivity. The datasheet provides guidelines for thermal management, and it's essential to follow these recommendations to ensure the device operates within its specified temperature range.
  • Yes, the TIP127G can be used as a switch, but it's essential to consider the device's switching characteristics, such as its turn-on and turn-off times, and ensure that it's properly driven to minimize switching losses. The device's saturation voltage (VCE(sat)) and collector-emitter resistance (rCE) should also be considered to ensure efficient switching operation. Additionally, the device's thermal capabilities should be taken into account to prevent overheating during switching operations.
  • To protect the TIP127G from ESD and other forms of electrical overstress, it's recommended to follow standard ESD protection practices, such as using ESD-sensitive handling and storage procedures, and incorporating ESD protection devices, such as TVS diodes or ESD protection arrays, into the circuit design. Additionally, the device should be operated within its specified voltage and current ratings, and overvoltage protection devices, such as zener diodes or voltage regulators, should be used to prevent voltage transients from damaging the device.

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TIP127G Overview

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Part Image TIP127 Texas Instruments

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Part Image TIP127 Central Semiconductor Corp

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For a full list of alternate parts for TIP127G, check out Findchips.com