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TIP147G - onsemi

Description: Monolithic Construction with Built-In Base-Emitter Shunt Resistor; High DC Current Gain Min hFE = 1000 @ IC = 5 A, VCE = 4 V; Collector-Emitter Sustaining Voltage @ 30 mA VCEO(sus) = 60 Vdc (Min) TIP140, TIP145 VCEO(sus) = 80 Vdc (Min) TIP141, TIP146 VCEO(sus) = 100 Vdc (Min) TIP142, TIP147; Pb-Free Packages are Available

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TIP147G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 CASE 340L-02
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3D Models
TIP147G - onsemi  - 3D model - Transistor Outline, Vertical - TO-247 CASE 340L-02
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TIP147G Details

  • Manufacturer Part Number:

    TIP147G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    500

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    125 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

TIP147G Frequently Asked Questions (FAQs)

  • The maximum collector current for each Darlington pair is 1 A, but this can be increased by paralleling multiple pairs.
  • To ensure stable operation, it's essential to use a bypass capacitor (e.g., 10 nF to 100 nF) between the emitter and collector of each Darlington pair, and to minimize lead lengths and stray inductance.
  • The recommended base resistor value depends on the application, but a typical value is 1 kΩ to 4.7 kΩ. A higher value can help reduce power consumption, but may affect switching speed.
  • Yes, the TIP147G can be used to drive inductive loads, but it's essential to add a freewheeling diode (e.g., 1N4001-1N4007) across the load to protect the transistor from back-EMF.
  • To prevent overheating, ensure good heat sinking (e.g., using a heat sink with a thermal resistance of 10°C/W or lower), and consider adding thermal monitoring or shutdown circuitry if the device will be operating near its maximum power rating.

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TIP147G Overview

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Part Image TIP147T STMicroelectronics

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin

Part Image TIP147T Fairchild Semiconductor Corporation

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220, Plastic/Epoxy, 3 Pin

Part Image TIP147T onsemi

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220, Plastic/Epoxy, 3 Pin

Part Image TIP147T Central Semiconductor Corp

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image TIP147T Baneasa SA

Power Bipolar Transistor, 15A I(C), 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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