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TIP32CG - onsemi

Description: Compact TO-220 AB Package; Collector-Emitter Sustaining Voltage -VCEO(sus) = 60 Vdc (min) - TIP31A, TIP32A =80 Vdc (min) - TIP31B, TIP32B =100 Vdc (min) - TIP31C, TIP32C; Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc; High Current Gain Bandwidth Product fT = 3.0 MHz (min) @ IC = 500 mAdc; Pb-Free Packages are Available

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PCB Footprints
TIP32CG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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3D Models
TIP32CG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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TIP32CG Details

  • Manufacturer Part Number:

    TIP32CG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

TIP32CG Frequently Asked Questions (FAQs)

  • The maximum SOA for the TIP32CG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be determined by plotting the device's voltage and current ratings against the thermal resistance and maximum junction temperature.
  • To ensure the TIP32CG is properly biased for linear operation, the base-emitter voltage (VBE) should be set between 0.6V to 0.8V, and the collector-emitter voltage (VCE) should be set between 1V to 5V. Additionally, the base current should be limited to prevent overheating and ensure a stable operating point.
  • The recommended heatsink design for the TIP32CG depends on the specific application and power dissipation requirements. However, a general guideline is to use a heatsink with a thermal resistance of less than 10°C/W and a surface area of at least 10 cm². The heatsink should also be designed to minimize thermal resistance and ensure good thermal contact with the device.
  • While the TIP32CG is primarily designed for linear applications, it can be used in switching applications with some limitations. The device's switching speed is relatively slow, with a turn-on time of around 10 μs and a turn-off time of around 20 μs. However, the TIP32CG can be used in low-frequency switching applications, such as in power supplies or motor control circuits, with proper design considerations.
  • To protect the TIP32CG from ESD, it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. The device should also be stored in an anti-static package or bag when not in use. Additionally, the circuit design should include ESD protection components, such as TVS diodes or ESD protection arrays, to prevent damage from electrostatic discharge.

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TIP32CG Overview

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Part Image TIP32C Baneasa SA

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Part Image TIP32C Texas Instruments

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