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TJ60S04M3L - Toshiba

Description: P-Channel 40 V 60A (Ta) 90W (Tc) Surface Mount DPAK+

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TJ60S04M3L - Toshiba PCB footprint - Other - Other - TO-252-3, DPak
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TJ60S04M3L Details

  • Manufacturer Part Number:

    TJ60S04M3L

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    83 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    146 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0094 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    570 pF

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TJ60S04M3L Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, and to derate the device's power dissipation according to the ambient temperature. Additionally, consider using a heat sink or thermal interface material to improve heat dissipation.
  • Although the datasheet specifies a maximum input voltage of 60V, it's recommended to limit the input voltage to 50V to ensure reliable operation and to prevent damage to the internal ESD protection diodes.
  • Yes, the TJ60S04M3L is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, parasitic inductance, and capacitance when designing the circuit. Additionally, ensure that the layout is optimized for high-frequency operation.
  • To protect the device from EOS and ESD, use a TVS diode or a transient voltage suppressor on the input pins, and follow proper handling and storage procedures to prevent ESD damage. Additionally, ensure that the PCB design includes adequate ESD protection and EOS protection measures.

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