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TJ8S06M3L - Toshiba

Description: MOSFET, P-CH, -10V, -8A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power RoHS Compliant: Yes

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TJ8S06M3L - Toshiba - PCB symbol
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TJ8S06M3L - Toshiba PCB footprint - Other - Other - TJ8S06M3L-1
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TJ8S06M3L - Toshiba - 3D model - Other - TJ8S06M3L-1
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TJ8S06M3L Details

  • Manufacturer Part Number:

    TJ8S06M3L

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    83 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    19 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.13 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    27 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TJ8S06M3L Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2 oz copper thickness and a thermal relief pattern are also recommended.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal interface material to maintain a safe junction temperature.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation.
  • Yes, the TJ8S06M3L is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the gate drive circuitry is designed to minimize ringing and overshoot.
  • Handle the device by the body or use an ESD wrist strap or mat to prevent ESD damage. Use ESD-sensitive handling and storage procedures to prevent damage during manufacturing and assembly.

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TJ8S06M3L Overview

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