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TK040Z65Z,S1F - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR TO-247-4L PD=360W F=1MHZ

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TK040Z65Z,S1F - Toshiba PCB footprint - Other - Other - TK040Z65Z,S1F-3
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TK040Z65Z,S1F - Toshiba  - 3D model - Other - TK040Z65Z,S1F-3
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TK040Z65Z,S1F Details

  • Manufacturer Part Number:

    TK040Z65Z,S1F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247-4L(T), 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    702 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    57 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    360 W

  • Pulsed Drain Current-Max (IDM):

    228 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK040Z65Z,S1F Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a heat sink or a metal plate for further heat dissipation.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and management practices. This includes providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device. Additionally, derating the device's power dissipation and operating frequency can help prevent overheating.
  • Toshiba recommends soldering the TK040Z65Z,S1F using a reflow soldering process with a peak temperature of 260°C (500°F) for 10-30 seconds. The device should be soldered using a solder with a melting point of 217°C (423°F) or higher. Hand soldering is not recommended due to the risk of overheating the device.
  • While the TK040Z65Z,S1F is a high-quality device, it's essential to consult with Toshiba's sales representative or a qualified reliability engineer to determine its suitability for high-reliability or aerospace applications. Additional testing, screening, and qualification may be required to ensure the device meets the specific requirements of these applications.
  • To prevent ESD damage, it's essential to handle the TK040Z65Z,S1F with care. Use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. Avoid touching the device's pins or exposed internal components, and use ESD-protective packaging and storage materials.

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TK040Z65Z,S1F Overview

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