Part Image

TK100E08N1 - Toshiba

Description: Toshiba TK100E08N1 N-channel MOSFET Transistor, 214 A, 80 V, 3-Pin TO-220

Download TK100E08N1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
TK100E08N1 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220
click to zoom
3D Models
TK100E08N1 - Toshiba  - 3D model - Transistor Outline, Vertical - TO-220
click to zoom

TK100E08N1 Details

  • Manufacturer Part Number:

    TK100E08N1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    278 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    52 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    255 W

  • Pulsed Drain Current-Max (IDM):

    568 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK100E08N1 Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the copper area should be connected to a ground plane to reduce thermal resistance.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the power dissipation of the TK100E08N1 according to the temperature derating curve provided in the datasheet. Additionally, ensure good thermal design and heat sinking to keep the junction temperature below the maximum rating.
  • The maximum allowable voltage for the input pins of the TK100E08N1 is 5.5V, which is the absolute maximum rating. However, it is recommended to keep the input voltage within the recommended operating range of 3.3V to 5V to ensure reliable operation.
  • Yes, the TK100E08N1 can be used in a switching regulator application. However, it is essential to ensure that the switching frequency is within the recommended range of 100 kHz to 500 kHz, and the input voltage is within the recommended operating range.
  • Toshiba recommends using a TVS (Transient Voltage Suppressor) diode or a Zener diode with a voltage rating of 5.5V or higher to protect the TK100E08N1 from ESD (Electrostatic Discharge) damage.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TK100E08N1 Overview

Use the download button to access the TK100E08N1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TK100, or try a keyword search, such as Power Field-Effect Transistors

Parts related to TK100E08N1

Showing 0 results