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TK100E10N1 - Toshiba

Description: Toshiba TK100E10N1 N-channel MOSFET Transistor, 207 A, 100 V, 3-Pin TO-220

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Symbol
TK100E10N1 - Toshiba - PCB symbol
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PCB Footprints
TK100E10N1 - Toshiba PCB footprint - Other - Other - 2-10X1A
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3D Models
TK100E10N1 - Toshiba - 3D model - Other - 2-10X1A
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TK100E10N1 Details

  • Manufacturer Part Number:

    TK100E10N1

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    222 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    63 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    255 W

  • Pulsed Drain Current-Max (IDM):

    434 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK100E10N1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended for optimal thermal performance. The thermal pad should be connected to the ground plane to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended temperature range (−40°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's power dissipation at high temperatures.
  • A soldering profile with a peak temperature of 260°C and a dwell time of 30-60 seconds is recommended. Avoid exceeding 280°C to prevent damage to the device.
  • Handle the device in an ESD-controlled environment. Use ESD-protective packaging, wrist straps, and mats. Avoid touching the device's pins or leads to prevent ESD damage.
  • Store the device in a dry, cool place (20°C to 30°C) with relative humidity below 60%. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.

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TK100E10N1 Overview

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