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TK100L60W - Toshiba

Description: N-ch MOSFET, 600 V, 0.018 Ω@10V, TO-3P(L), DTMOSⅣ

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TK100L60W - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TK100L60W
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3D Models
TK100L60W - Toshiba  - 3D model - Transistor Outline, Vertical - TK100L60W
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TK100L60W Details

  • Manufacturer Part Number:

    TK100L60W

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-3P(L), 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.22

  • Avalanche Energy Rating (Eas):

    1582 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    797 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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TK100L60W Overview

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Part Image TK100L60W(F) Toshiba America Electronic Components

Power Field-Effect Transistor, 100A I(D), 600V, 0.018ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET

Part Image TK100L60W(Q) Toshiba America Electronic Components

Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET