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TK100S04N1L - Toshiba

Description: N-ch MOSFET, 40 V, 100 A, 0.0023 Ω@10V, DPAK+

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Symbol
TK100S04N1L - Toshiba - PCB symbol
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PCB Footprints
TK100S04N1L - Toshiba PCB footprint - Other - Other - 2-7M1A
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3D Models
TK100S04N1L - Toshiba - 3D model - Other - 2-7M1A
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TK100S04N1L Details

  • Manufacturer Part Number:

    TK100S04N1L

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    114 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    220 pF

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    180 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK100S04N1L Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended derating curves for high-temperature operation.
  • The maximum allowed voltage transient for the TK100S04N1L is ±20% of the rated voltage for a duration of ≤ 100ms, according to Toshiba's application notes.
  • Yes, but ensure that the devices are matched for current sharing, and follow Toshiba's guidelines for parallel operation to avoid uneven current distribution and thermal runaway.
  • Toshiba recommends a gate drive voltage of 10-15V and a current of 1-2A for optimal switching performance and to minimize switching losses.

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TK100S04N1L Overview

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