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TK10A50W,S5X - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=30W F=1MHZ

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TK10A50W,S5X - Toshiba - PCB symbol
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PCB Footprints
TK10A50W,S5X - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TOSHIBA: 2-10U1S
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3D Models
TK10A50W,S5X - Toshiba - 3D model - Transistor Outline, Vertical - TOSHIBA: 2-10U1S
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TK10A50W,S5X Details

  • Manufacturer Part Number:

    TK10A50W,S5X

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-67, TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    161 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    9.7 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • Feedback Cap-Max (Crss):

    2.3 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    38.8 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK10A50W,S5X Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation, Toshiba recommends derating the power dissipation according to the ambient temperature, and using a heat sink with a thermal resistance of less than 10°C/W. Additionally, ensure good airflow and avoid thermal hotspots.
  • Toshiba recommends limiting voltage transients to less than 50V for a duration of less than 100ns to prevent damage to the device. Exceeding this limit may cause permanent damage or affect reliability.
  • Yes, the TK10A50W,S5X is suitable for high-frequency switching applications up to 100kHz. However, Toshiba recommends using a snubber circuit to reduce voltage spikes and ringing, and ensuring that the device is properly cooled.
  • Toshiba recommends a gate drive voltage of 10-15V and a current of 1-2A to ensure optimal switching performance and minimize switching losses.

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TK10A50W,S5X Overview

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