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TK10A60W - Toshiba

Description: N-ch MOSFET, 600 V, 0.38 Ω@10V, TO-220SIS, DTMOSⅣ

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Symbol
TK10A60W - Toshiba - PCB symbol
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PCB Footprints
TK10A60W - Toshiba PCB footprint - Other - Other - TO220SIS-MOS-N
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3D Models
TK10A60W - Toshiba - 3D model - Other - TO220SIS-MOS-N
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TK10A60W Details

  • Manufacturer Part Number:

    TK10A60W

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-67, TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    134 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    9.7 A

  • Drain-source On Resistance-Max:

    0.38 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.3 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    38.8 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK10A60W Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • The TK10A60W requires a bias voltage of 15V to 20V on the gate driver, and a bootstrap capacitor of at least 1uF to ensure proper operation. Refer to the application note for detailed biasing and layout guidelines.
  • The maximum allowed case temperature for the TK10A60W is 150°C. Operating above this temperature may reduce the device's lifespan and reliability.
  • Yes, the TK10A60W is suitable for high-frequency switching applications up to 100kHz. However, the user must ensure that the device is properly biased and the PCB layout is optimized for high-frequency operation.
  • Toshiba recommends using a voltage clamp or a zener diode to protect the device from overvoltage conditions. Additionally, a current sense resistor and a fuse can be used to detect and prevent overcurrent conditions.

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TK10A60W Overview

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