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TK11A45D - Toshiba

Description: N-ch MOSFET, 450 V, 0.62 Ω@10V, TO-220SIS, π-MOSⅦ

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PCB Footprints
TK11A45D - Toshiba PCB footprint - Other - Other - TO220SIS-MOS-N
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3D Models
TK11A45D - Toshiba  - 3D model - Other - TO220SIS-MOS-N
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TK11A45D Details

  • Manufacturer Part Number:

    TK11A45D

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SC-67

  • Package Description:

    SC-67, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    238 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    450 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.62 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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TK11A45D Overview

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