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TK11A65W - Toshiba

Description: N-ch MOSFET, 650 V, 0.39 Ω@10V, TO-220SIS, DTMOSⅣ

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Symbol
TK11A65W - Toshiba - PCB symbol
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PCB Footprints
TK11A65W - Toshiba PCB footprint - Other - Other - TO220SIS-MOS-N
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3D Models
TK11A65W - Toshiba - 3D model - Other - TO220SIS-MOS-N
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TK11A65W Details

  • Manufacturer Part Number:

    TK11A65W

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-67, TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    178 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    11.1 A

  • Drain-source On Resistance-Max:

    0.39 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.8 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    44.4 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK11A65W Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material.
  • The maximum allowed voltage transient for the TK11A65W is ±20% of the rated voltage for a duration of ≤100ms. Exceeding this may cause damage to the device.
  • Yes, the TK11A65W can be used in a parallel configuration to increase current capability. However, it's essential to ensure that the devices are matched in terms of electrical characteristics and thermal performance to avoid uneven current sharing.
  • Toshiba recommends storing the TK11A65W in a dry, cool place with a relative humidity of ≤60% and a temperature range of -10°C to 30°C. It's also recommended to use a moisture barrier bag or desiccant to prevent moisture absorption.

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TK11A65W Overview

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