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TK12A50D - Toshiba

Description: N-ch MOSFET, 500 V, 0.52 Ω@10V, TO-220SIS, π-MOSⅦ

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Symbol
TK12A50D - Toshiba - PCB symbol
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PCB Footprints
TK12A50D - Toshiba PCB footprint - Other - Other - TO220SIS-MOS-N
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3D Models
TK12A50D - Toshiba - 3D model - Other - TO220SIS-MOS-N
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TK12A50D Details

  • Manufacturer Part Number:

    TK12A50D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-67

  • Package Description:

    SC-67, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    364 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.52 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK12A50D Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal relief pattern under the package to improve heat dissipation. A minimum of 2 oz copper thickness and a thermal via array under the device are also recommended.
  • To ensure reliable operation at high temperatures, it is essential to follow the recommended derating curves for voltage and current, and to ensure that the device is properly heatsinked. Additionally, the device should be operated within the specified junction temperature range.
  • The TK12A50D has an internal ESD protection diode, but it is still recommended to follow proper ESD handling procedures during assembly and testing. A human body model (HBM) of 2 kV and a machine model (MM) of 200 V are recommended.
  • Yes, the TK12A50D is qualified to AEC-Q101 standards, making it suitable for automotive and high-reliability applications. However, it is essential to follow the recommended qualification and testing procedures for these applications.
  • Toshiba recommends a peak soldering temperature of 260°C for a maximum of 10 seconds, with a soldering iron temperature of 350°C. A soldering flux with a low acidity level is also recommended.

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TK12A50D Overview

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