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TK13A60D - Toshiba

Description: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) 600V , 50W , 13A , -55°C to 150°C

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TK13A60D - Toshiba - PCB symbol
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TK13A60D - Toshiba PCB footprint - Other - Other - 2-10U1B_2025
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TK13A60D - Toshiba - 3D model - Other - 2-10U1B_2025
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TK13A60D Details

  • Manufacturer Part Number:

    TK13A60D

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    SC-67

  • Package Description:

    SC-67, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0.4

  • Avalanche Energy Rating (Eas):

    511 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.43 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    52 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK13A60D Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • The TK13A60D requires a bias voltage of 15V to 20V on the gate pin, and a current limit resistor to prevent excessive current. A gate resistor of 1kΩ to 10kΩ is recommended.
  • The maximum allowable power dissipation for the TK13A60D is 125W, but this can be increased to 150W with proper heat sinking and thermal management.
  • Yes, the TK13A60D is suitable for high-frequency switching applications up to 100kHz, but the user must ensure that the device is properly snubbed to prevent voltage ringing and oscillation.
  • Toshiba recommends using a voltage clamp or TVS diode to protect the device from overvoltage conditions, and a current sense resistor with a fuse or circuit breaker to protect against overcurrent conditions.

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