Part Image

TK14A65W,S5X(M - Toshiba

Description: Toshiba TK14A65W,S5X(M N-channel MOSFET Transistor, 13.7 A, 650 V, 3-Pin TO-220SIS

Download TK14A65W,S5X(M Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
TK14A65W,S5X(M - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220SIS-ren1
click to zoom
3D Models
TK14A65W,S5X(M - Toshiba  - 3D model - Transistor Outline, Vertical - TO-220SIS-ren1
click to zoom

TK14A65W,S5X(M Details

  • Manufacturer Part Number:

    TK14A65W,S5X(M

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-67, TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    231 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    13.7 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • Feedback Cap-Max (Crss):

    4 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    54.8 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK14A65W,S5X(M Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a heat sink or a metal plate for further heat dissipation.
  • To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet. The device requires a Vcc of 15V, and the input voltage should be within the specified range. Additionally, ensure the output current is within the recommended range to prevent overheating and damage to the device.
  • The maximum allowable power dissipation for the TK14A65W,S5X(M is 65W. Exceeding this limit can cause the device to overheat, leading to reduced performance, reliability issues, or even device failure.
  • While the TK14A65W,S5X(M is a high-performance device, it is not specifically designed for high-reliability or high-temperature applications. For such applications, consider using devices with a higher temperature rating (e.g., up to 150°C or higher) and consult with Toshiba's application engineers for guidance.
  • To prevent damage, store the TK14A65W,S5X(M in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the leads or pins. Use anti-static packaging and follow proper ESD handling procedures to prevent electrostatic discharge damage.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

TK14A65W,S5X(M Overview

Use the download button to access the TK14A65W,S5X(M schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like TK14A, or try a keyword search, such as Power Field-Effect Transistors

Parts related to TK14A65W,S5X(M

Showing 0 results