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TK17A65W,S5X - Toshiba

Description: Pb-F POWER MOSFET TRANSISTOR TO-220SIS MOQ=50 PD=45W F=1MHZ

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TK17A65W,S5X - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220SIS-ren1
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TK17A65W,S5X - Toshiba  - 3D model - Transistor Outline, Vertical - TO-220SIS-ren1
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TK17A65W,S5X Details

  • Manufacturer Part Number:

    TK17A65W,S5X

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-67, TO-220SIS, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    314 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    17.3 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • Feedback Cap-Max (Crss):

    7 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    69.2 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

TK17A65W,S5X Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • Implement a heat sink or thermal management system, and ensure the device is operated within the recommended temperature range (TJ = -20 to 150°C).
  • The maximum allowed voltage for the gate-source (VGS) is ±20V, and for the gate-drain (VGD) is ±15V.
  • Yes, the TK17A65W,S5X is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout and decoupling to minimize ringing and EMI.
  • The internal diode's reverse recovery characteristics can be managed by using a snubber circuit or a fast-recovery diode in parallel with the MOSFET.

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TK17A65W,S5X Overview

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